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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF175 HF/VHF power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
FEATURES * High power gain * Low intermodulation distortion * Easy power control * Good thermal stability * Withstands full load mismatch * Gold metallization ensures excellent reliability. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the 'General' section for further information. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION
2 3
MSB057
BLF175
PIN CONFIGURATION
ook, halfpage
1
4
d g
MBB072
s
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION class-A class-AB CW, class-B Note 1. 2-tone efficiency. f (MHZ) 28 28 108 VDS (V) 50 50 50 IDQ (mA) 800 150 30 PL (W) 8 (PEP) 30 (PEP) 30 GP (dB) > 24 typ. 24 typ. 20 D (%) - typ. 40 (note 1) typ. 65 d3 (dB) < -40 typ. -35 -
September 1992
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF175
MAX. 110 20 4 68 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 68 W Tmb = 25 C; Ptot = 68 W THERMAL RESISTANCE 2.6 K/W 0.3 K/W
handbook, halfpage
10
MRA905
MGP063
handbook, halfpage
100
Ptot (W)
ID (A)
80
(2) (1) (2)
60
(1)
1 40
20
10-1 1 10 VDS (V)
102
0 0 40 80 120 Th (C) 160
(1) Current is this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) VGS gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS ID = 10 mA; VGS = 0 VGS = 0; VDS = 50 V VGS = 20 V; VDS = 0 ID = 10 mA; VDS = 10 V ID = 10 mA; VDS = 10 V ID = 1 A; VDS = 10 V ID = 1 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz MIN. 110 - - 2 - 1.1 - - - - - TYP. - - - - - 1.6 0.75 5.5 130 36 3.7
BLF175
MAX. - 100 1 4.5 100 - 1.5 - - - -
UNIT V A A V mV S A pF pF pF
handbook, halfpage
0
MGP064
T.C. (mV/K)
handbook, halfpage
6
MGP065
-1
ID (A) 4
-2
-3 2 -4
-5 10-2
10-1
0 ID (A) 1 0 5 VGS (V) 10
VDS = 10 V. VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
MGP066
handbook, halfpage
1.5
handbook, halfpage
400
MGP067
RDS(on) () 1
C (pF) 300
200 0.5 100 Cos 0 0 50 100 Tj (C) 150 0 0 10 20 30 40 50 VDS (V) Cis
ID = 1 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage
150
MGP068
Crs (pF) 100
50
0 0 10 20 30 40 50 VDS (V)
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-A OPERATION Th = 25 C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in SSB operation in a common source circuit. f1 = 28.000 MHz; f2 = 28.001 MHz. PL (W) 0 to 8 (PEP) Note f (MHz) 28 VDS (V) 50 IDQ (mA) 800 GP (dB) > 24 typ. 28 d3 (dB) (note 1) > -40 typ. -44 d5 (dB) (note 1) < -40 typ. -64
BLF175
RGS () 24 24
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB.
MGP069
MGP070
handbook, halfpage
40
handbook, halfpage
0
Gp (dB) 30
d3 (dB) -20
20
-40
10
-60
0 0 5 10 15 20 PL (W) PEP
-80
0
5
10
15 20 PL (W) PEP
Class-A operation; VDS = 50 V; IDQ = 0.8 A; RGS = 24 ; f1 = 28.000 MHz; f2 = 28.001 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Class-A operation; VDS = 50 V; IDQ = 0.8 A; RGS = 24 ; f1 = 28.000 MHz; f2 = 28.001 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Fig.9
Power gain as a function of load power, typical values.
Fig.10 Third order intermodulation distortion as a function of load power, typical values.
September 1992
6
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
MGP071
handbook, halfpage
40
handbook, halfpage
-20
MGP072
Gp (dB) 30 d3 (dB)
20
-40
10
0 0 10 20 30 f (MHz) 40
-60
0
10
20
30
f (MHz)
40
Class-A operation; VDS = 50 V; IDQ = 0.8 A; PL = 8 W (PEP); RGS = 24 ; f1 - f2 = 1 MHz.
Class-A operation; VDS = 50 V; IDQ = 0.8 A; PL = 8 W (PEP); RGS = 24 ; f1 - f2 = 1 MHz.
Fig.11 Power gain as a function of frequency, typical values.
Fig.12 Third order intermodulation distortion as a function of frequency, typical values.
handbook, full pagewidth
R2
C4 D.U.T. C5 L4 50 output C9
50 input C1
T1
C2
L2 R1 C6
L1 C3 L3
C7
R3
C8 +VG +VD f = 28 MHz.
MGP073
Fig.13 Test circuit for class-A operation.
September 1992
7
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
List of components (class-A test circuit) COMPONENT C1 C2 C3, C4, C6 C5 C7 C8 C9 L1 DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor aluminium electrolytic capacitor multilayer ceramic chip capacitor (note 1) 4 turns enamelled 0.6 mm copper wire 36 turns enamelled 0.7 mm copper wire wound on a rod grade 4B1 Ferroxcube drain choke grade 3B Ferroxcube wideband RF choke 8 turns enamelled 1 mm copper wire 189 nH length 9.5 mm; int. dia. 5 mm; leads 2 x 3 mm VALUE 39 pF 3 x 10 nF 100 nF 10 nF 3 x 100 nF 10 F, 63 V 24 pF 86 nH length 3.3 mm; int. dia. 5 mm; leads 2 x 2 mm length 30 mm; int. dia. 5 mm DIMENSIONS
BLF175
CATALOGUE NO.
2222 852 47103 2222 852 47104 2222 852 47103 2222 852 47104 2222 030 28109
L2
20 H
4330 030 30031
L3 L4
4312 020 36640
R1 R2 R3 T1
0.4 W metal film resistor 0.4 W metal film resistor 0.4 W metal film resistor 4 : 1 transformer; 18 turns twisted pair of 0.25 mm copper wire with 10 twists per cm, wound on a grade 4C6 toroidal core
24 1500 10 dimensions 9 x 6 x 3 mm 4322 020 97171
Note 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
September 1992
8
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
handbook, full pagewidth
100
mounting screw
90 strap strap
L3 +VG L1 C3 R1 T1 C2 C1 R2 C4 C9 C5 L4 C6 R3 L2 C8 +VDD C7
MGP074
Note: The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts.
Fig.14 Component layout for 28 MHz class-A test circuit.
September 1992
9
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25 C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in SSB operation in a common source circuit. f1 = 28.000 MHz; f2 = 28.001 MHz. PL (W) 30 (PEP) f (MHz) 28 VDS (V) 50 IDQ (mA) 150 GP (dB) typ. 24 D (%) typ. 40 (note 2) d3 (dB) (note 1) typ. -35 d5 (dB) (note 1) typ. -40
BLF175
RGS () 22
Notes 1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. 2. 2-tone efficiency. Ruggedness in class-AB operation The BLF175 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at PL = 30 W single tone under the following conditions: VDS = 50 V; f = 28 MHz.
MGP076
MGP077
handbook, halfpage
28
handbook, halfpage
60
Gp (dB) 26
D (%) 50
24
40
22
30
20 0 20 40 PL (W) PEP 60
20 0 20 40 PL (W) PEP 60
Class-AB operation; VDS = 50 V; IDQ = 0.15 A; RGS = 22 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.15 A; RGS = 22 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.15 Power gain as a function of load power, typical values.
Fig.16 Two tone efficiency as a function of load power, typical values.
September 1992
10
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
MGP078
MGP079
handbook, halfpage
0
handbook, halfpage
0
d3 (dB) -20
d5 (dB) -20
-40
-40
-60
0
20
40
PL (W) PEP
60
-60
0
20
40
PL (W) PEP
60
Class-AB operation; VDS = 50 V; IDQ = 0.15 A; RGS = 22 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.15 A; RGS = 22 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.17 Third order intermodulation distortion as a function of load power, typical values.
Fig.18 Fifth order intermodulation distortion as a function of load power, typical values.
handbook, full pagewidth
C10 C1 C3 D.U.T. L1 L2 C8 C4 R1 C5 L4 R3 +VD C9 C12 L3 C2 C7 L5 C11 50 output
50 output
R2
C6
L6
+VG
MGP080
f = 28 MHz.
Fig.19 Test circuit for class-AB operation.
September 1992
11
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
List of components (class-AB test circuit) COMPONENT C1, C10 C2, C4, C8, C11 C3 C5, C6, C9 C7 C12 L1 DESCRIPTION multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 1) aluminium electrolytic capacitor VALUE 62 pF 5 to 60 pF 51 pF 100 nF 10 pF 10 F, 63 V length 11 mm; int. dia. 6 mm; leads 2 x 4 mm length 10 mm; width 6 mm length 20 mm; int. dia. 12 mm; leads 2 x 2 mm length 13 mm; int. dia. 7 mm; leads 2 x 3 mm DIMENSIONS
BLF175
CATALOGUE NO.
2222 809 07011
2222 852 47104
2222 030 28109
9 turns enamelled 1 mm copper wire 280 nH
L2, L3 L4
stripline (note 2) 14 turns enamelled 1 mm copper wire 10 turns enamelled 1 mm copper wire grade 3B Ferroxcube wideband RF choke 0.4 W metal film resistor 0.4 W metal film resistor 0.4 W metal film resistor
30 1650 nH
L5
380 nH
L6 R1 R2 R3 Notes
4312 020 36640 22 1 M 10
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 4.5), thickness 1.6 mm.
September 1992
12
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
handbook, full pagewidth
150
mounting screw
strap strap rivet strap 70
R3 C9 R2 C5 L1 R1 L5 L2 C1 C2 C4 C3 L3 C7 C8 C11 C10 C6 L6 L4 C12
MGP081
Note: The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts. Dimensions in mm.
Fig.20 Component layout for 28 MHz class-AB test circuit.
September 1992
13
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
handbook, halfpage
30
MGP083
MGP084
Zi ()
handbook, halfpage
50
ZL ()
20
ri
40
RL
10
30
0 xi -10
20
10
XL
-20 0 10 20 30 f (MHz) 40
0 0 10 20 f (MHz) 30
Class-AB operation; VDS = 50 V; IDQ = 0.15 A; PL = 30 W (PEP); RGS = 22 .
Class-AB operation; VDS = 50 V; IDQ = 0.15 A; PL = 30 W (PEP); RGS = 22 .
Fig.21 Input impedance as a function of frequency (series components), typical values.
Fig.22 Load impedance as a function of frequency (series components), typical values.
MGP085
handbook, halfpage
30
Gp (dB) 20
10
0 0 10 20 f (MHz) 30
Class-AB operation; VDS = 50 V; IDQ = 0.15 A; PL = 30 W (PEP); RGS = 22 .
Fig.23 Power gain as a function of frequency, typical values.
September 1992
14
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source circuit. MODE OF OPERATION CW, class-B f (MHz) 108 VDS (V) 50 IDQ (mA) 30 PL (W) 30 GP (dB) typ. 20 D (%) typ. 65
BLF175
RGS () 10
handbook, halfpage
10
MGP086
MGP087
handbook, halfpage
50 ZL
Zi () 5 ri
() 40
30 XL 20
0 10 xi -5 0 100 f (MHz) 200 0 0
RL
100
f (MHz)
200
Class-B operation; VDS = 50 V; IDQ = 30 mA; PL = 30 W; RGS = 10 .
Class-B operation; VDS = 50 V; IDQ = 30 mA; PL = 30 W; RGS = 10 .
Fig.24 Input impedance as a function of frequency (series components), typical values.
Fig.25 Load impedance as a function of frequency (series components), typical values.
September 1992
15
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
handbook, halfpage
30
MGP088
Gp (dB) 20
10
0 0 100 f (MHz) 200
Class-B operation; VDS = 50 V; IDQ = 30 mA; PL = 30 W; RGS = 10 .
Fig.26 Power gain as a function of frequency, typical values.
September 1992
16
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLF175
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1992
17
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF175
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992
18

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